bsc080p03ls g opti mos ? -p power-transistor features ? p-channel ? enhancement mode ? logic level ? 150c operating temperature ? avalanche rated; rohs compliant ? vgs=25v, specially suited for notebook applications ? halogen-free according to iec61249-2-21 maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t c =25 c a t c =70 c t a =25 c 1) pulsed drain current i d,pulse t c =25 c 2) avalanche energy, single pulse e as i d =-30 a, r gs =25 ? mj gate source voltage v gs v power dissipation p tot t c =25 c w t a =25 c 1) operating and storage temperature t j , t stg c esd class jesd22-a114-hbm soldering temperature iec climatic category; din iec 68-1 55/150/56 -55 ... 150 25 2.5 -16 89 260 c value 248 -120 -30 -30 1c (1kv-2kv) v ds -30 v r ds(on),max 8 m ? i d -30 a product summary pg-tdson-8 type package bsc080p03ls g pg-tdson-8 marking lead free packing 080p03ls yes dry rev. 1.04 page 1 2010-05-04
bsc080p03ls g parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 1.4 k/w thermal resistance, junction - ambient r thja 6 cm 2 cooling area 1) --50 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =-250 a -30 - - v gate threshold voltage v gs(th) v ds = v gs , i d =-250 a -2.2 -1.5 -1 zero gate voltage drain current i dss v ds =-30 v, v gs =0 v, t j =25 c - -0.1 -1 a v ds =-30 v, v gs =0 v, t j =125 c - -10 -100 gate-source leakage current i gss v gs =-25 v, v ds =0 v - -10 -100 na drain-source on-state resistance r ds(on) v gs =-10 v, i d =-30 a - 6.1 8.0 m ? gate resistance r g -4- ? transconductance g fs | v ds |>2| i d | r ds(on)max , i d =-30 a 30 60 - s 1) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. values 2) see figure 3. rev. 1.04 page 2 2010-05-04
bsc080p03ls g parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 4620 6140 pf output capacitance c oss - 1430 1900 reverse transfer capacitance c rss - 1200 1800 turn-on delay time t d(on) - 13.5 20.3 ns rise time t r - 87.0 130.5 turn-off delay time t d(off) - 79.0 118.5 fall time t f - 108.0 162.0 gate char g e characteristics 3) gate to source charge q gs - -12.7 -16.8 nc gate charge at threshold q g(th) - -7.1 -9.5 gate to drain charge q gd - -34.3 -51.4 switching charge q sw - -39.8 -58.8 gate charge total q g - -92.0 -122.4 gate plateau voltage v plateau - -2.8 - v output charge q oss v dd =-15 v, v gs =0 v - 25.6 34.0 reverse diode diode continous forward current i s - - 30.0 a diode pulse current i s,pulse - - -120 diode forward voltage v sd v gs =0 v, i f =-30 a, t j =25 c - -0.9 -1.2 v reverse recovery time t rr v r =15 v, i f =| i s |, d i f /d t =100 a/s -3544ns reverse recovery charge q rr - 28.0 - nc t c =25 c values v gs =0 v, v ds =-15 v, f =1 mhz v dd =-15 v, v gs =- 10 v, i d =-30 a, r g =6 ? v dd =-24 v, i d =30 a, v gs =0 to -10 v rev. 1.04 page 3 2010-05-04
bsc080p03ls g 1 power dissipation 2 drain current p tot =f( t c ); t p 10 s i d =f( t c ); | v gs | 10 v; t p 10 s 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t c =25 c 1) ; d =0 z thjs =f( t p ) parameter: t p parameter: d = t p / t 1 s 100 s 1 ms 10 ms dc 10 2 10 1 10 0 10 -1 10 2 10 1 10 0 10 -1 10 -2 0.01 0.1 1 10 100 1000 0.1 1 10 100 -v ds [v] -i d [a] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 1 10 0 10 -1 10 -2 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 t p [s] z thjs [k/w] 0 10 20 30 40 50 60 70 80 90 100 0 40 80 120 160 t c [c] p tot [w] 0 4 8 12 16 20 24 28 32 0 40 80 120 160 t c [c] -i d [a] rev. 1.04 page 4 2010-05-04
bsc080p03ls g 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c parameter: t j -2.5 v -2.7 v -3 v -3.2 v -3.5 v -4.5 v -10 v 0 5 10 15 20 25 30 0 10203040 -i d [a] r ds(on) [m ? ] 25 c 150 c 0 10 20 30 40 50 60 01234 -v gs [v] -i d [a] 0 20 40 60 0102030 -i d [a] g fs [s] -2.3 v -2.5 v -2.7 v -3 v -3.2 v -3.5 v -4.5 v -10 v 0 10 20 30 40 50 60 70 0123 -v ds [v] -i d [a] rev. 1.04 page 5 2010-05-04
bsc080p03ls g 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =-30 a; v gs =-10 v v gs(th) =f( t j ); v gs = v ds ; i d =-250 a 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ) parameter: t j typ. 98 % 4 6 8 10 12 -60 -20 20 60 100 140 180 t j [c] r ds(on) [m ? ] ciss coss crss 10 4 10 3 10 2 0 5 10 15 20 25 30 -v ds [v] c [pf] typ. min. max. 0 0.5 1 1.5 2 2.5 3 -60 -20 20 60 100 140 180 t j [c] -v gs(th) [v] 25 c, typ 150 c, typ 25 c, 98% 150 c, 98% 0.1 1 10 100 0 0.5 1 1.5 -v sd [v] i f [a] rev. 1.04 page 6 2010-05-04
bsc080p03ls g 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 ? v gs =f( q gate ); i d =-30 a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) =f( t j ); i d =-250 a -6 v -15 v -24 v 0 1 2 3 4 5 6 7 8 0 20406080100 -q gate [nc] -v gs [v] 26 28 30 32 34 36 -60 -20 20 60 100 140 180 t j [c] -v br(dss) [v] v gs q gate v gs(th) q g(th) q gs q gd q sw q g 25 c 100 c 125 c 10 3 10 2 10 1 10 0 10 2 10 1 10 0 t av [s] -i av [a] rev. 1.04 page 7 2010-05-04
bsc080p03ls g package outline pg-tdson-8: outline rev. 1.04 page 8 2010-05-04
bsc080p03ls g published by infineon technologies ag 81726 munich, germany ? 2008 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office (www.infineon.com). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev. 1.04 page 9 2010-05-04
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